TITLE

Thermal stability of sulfur passivated InP(100)-(1x1)

AUTHOR(S)
Anderson, G.W.; Hanf, M.C.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the thermal stability of sulfur (S)-passivated indium phosphide(100). Use of an ultrahigh vacuum chamber; Temperature at which S removal and sample evaporation begins; Role of the evaporation process in the formation of a roughened surface.
ACCESSION #
4227610

 

Related Articles

  • Passivation of the InP surface using polysulfide and silicon nitride overlayer. Kapila, A.; Malhotra, V. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1009 

    Examines the passivation of indium phosphide (InP) surface using polysulfide and silicon nitride overlayer. Analysis on the doubled photoluminescence intensity of passivated InP; Estimation of the interface trap density using high-low capacitance technique; Deposition of overlayers at 200...

  • Resistance switching in indium phosphide using hydrogen passivation of acceptors. Balasubramanian, Sathya; Kumar, Vikram // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2256 

    Demonstrates the use of dopant passivation by hydrogen in indium phosphide (InP) for resistance switching applications. Utilization of the acceptor passivation to form a rectifying contact on InP; Factors attributed to the conversion of the rectifying contact; Attainment of selective conversion...

  • Electron cyclotron resonance plasma process for InP passivation. Hu, Y.Z.; Li, M.; Wang, Y.; Irene, E.A.; Rowe, M.; Casey Jr., H.C. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1113 

    Examines the electron cyclotron resonance (ECR) plasma process for indium phosphide (InP) passivation using in situ ellipsometry. Monitoring of ECR at room temperature in the shadow between a shutter and the sample; Implication for the absence of detectable excess phosphorus at the InP-oxide...

  • Role of polysulfides in the passivation of the InP surface. Iyer, R.; Lile, D.L. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p437 

    Examines the role of polysulfides in the passivation of the indium phosphide surface. Interface quality of the InP treated with a polysulfide solution; Obtainment of interface state densities; Indication of low-temperature photoluminescence spectra.

  • Sweden's Uppsala University and IBM jointly develop a...  // Physics Today;Jan97, Vol. 50 Issue 1, p7 

    Reports that Sweden's Uppsala University, along with IBM, have developed a rotary ultrahigh vacuum system for advanced corelevel spectroscopy. Benefits of the rotary system; Explanation offered by Professor Joachim Stohr, IBM Almaden Research Center; Design of the system by Jan-Olof Forsell, and...

  • How well can you manipulate your vacuum samples. Studt, Tim // R&D Magazine;June97, Vol. 39 Issue 7, p75 

    Looks at the problems faced in the manipulation of samples in ultrahigh vacuum (UHV) environments. Need for positioning systems with accuracy; Causes of various problems; Use of the micrometer. INSETS: Defining the problem.;A compendium of positioning system error sources.;More info..

  • Should your next UHV gauge run hot or cold? Comello, Vic // R&D Magazine;Nov97, Vol. 39 Issue 12, p65 

    Presents information on the ultrahigh vacuum hot-cathode and cold-cathode gauges. Indepth information on both gauges; What are the potential problems of the gauges; What are the advantages of the cold-cathode gauges.

  • Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum... Lepine, B.; Abadou, S.; Guivarc'h, A.; Jézéquel, G.; Députier, S.; Gueárin, R.; Filipe, A.; Schuhl, A.; Abel, F.; Cohen, C.; Rocher, A.; Crestou, J. // Journal of Applied Physics;3/15/1998, Vol. 83 Issue 6, p3077 

    Presents a study which examined ultrahigh vacuum (UHV) of the solid state interdiffusions in epitaxial Fe/GaAs contacts. Method used to prepare the Fe/GaAs samples; Samples of characterized ex situ set by complementary methods; Observation of the formation of an interfacial reacted layer...

  • Adapting an electrostatic voltmeter for ultrahigh-vacuum operation. Loubriel, G. M. // Review of Scientific Instruments;Apr1985, Vol. 56 Issue 4, p623 

    A modification of a commercial electrostatic voltmeter which operates on the Kelvin–Zisman principle is described which permits operation inside a vacuum system at pressures below 5.0×10-8 Torr. This allows for in-vacuum electrostatic measurements of voltages of up to 5 kV.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics