Observation of dislocation-mediated layer-by-layer interface growth

Tong, X.; Gibson, J.M.
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p168
Academic Journal
Examines the growth of palladium silicide (Pd[sub 2]Si) thin films on silicon surfaces using in situ transmission electron microscope under ultrahigh vacuum conditions. Reaction of deposited Pd to Si at room temperature; Growth of films into strained islands at elevated temperatures; Cause of the layer-by-layer growth of the islands at the interface.


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