TITLE

Observation of dislocation-mediated layer-by-layer interface growth

AUTHOR(S)
Tong, X.; Gibson, J.M.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p168
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of palladium silicide (Pd[sub 2]Si) thin films on silicon surfaces using in situ transmission electron microscope under ultrahigh vacuum conditions. Reaction of deposited Pd to Si at room temperature; Growth of films into strained islands at elevated temperatures; Cause of the layer-by-layer growth of the islands at the interface.
ACCESSION #
4227609

 

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