Is there an elastic anomaly for a (001) monolayer of InAs embedded in GaAs?

Bernard, James E.; Zunger, Alex
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p165
Academic Journal
Presents a high-electron resolution microscopic analysis of the perpendicular distortion of indium arsenide (InAs) monolayer in gallium arsenide (GaAs). Breakdown in the continuum elasticity theory in the monolayer film limit; Inability of the valence-force-field model to reveal the elastic anomaly; Effect of substitutional In on the grown GaAs layer.


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