TITLE

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

AUTHOR(S)
Chow, W.W.; Schneider, R.P.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the wavelength dependence of the threshold in an INGaP-InAlGaP vertical cavity surface emitting semiconductor laser. Application of the semiconductor gain medium microscopic theory as laser model; Discovery of minimum threshold lasing wavelength for a range of laser structures; Role of Coulomb interactions in band-structure effect.
ACCESSION #
4227598

 

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