TITLE

Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN

AUTHOR(S)
Kim, J.G.; Frenkel, A.C.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p91
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the electrical characteristics of heavily Silicon-doped zinc blende gallium nitride epilayers deposited on beta-silicon carbon silicon substrates. Growth of beta-gallium nitride using molecular beam epitaxy; Discussion on the silicon incorporation in beta-gallium nitride result; Presentation of simultaneous high mobility conduction band.
ACCESSION #
4227584

 

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