TITLE

Novel wide-band time-resolved photoreflectance measurement technique

AUTHOR(S)
Pires, M. Pamplona; Souza, P.L.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p88
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a wide-band time-resolved photoreflectance measurement technique. Advantage of eliminating in a natural way any undesirable photoluminescence or background signal; Sources of parameters for carrier dynamics studies; Implications for the change in reflectivity due to band-filling effects.
ACCESSION #
4227583

 

Related Articles

  • Time-resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interface. Cheville, R.A.; Haynes, W.B.; Halas, N.J. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1476 

    Analyzes a series of subpicosecond time-resolved reflectivity measurements in n-type gallium arsenide (GaAs) interfaces at photoexcitation densities. Dependence of reflectivity signal to interface preparation; Preparation of GaAs surface; Changes in the space-charge field of GaAs.

  • Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers. Ibuka, Shigeo; Tajima, Michio // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5035 

    We have investigated the temporal decay of luminescence due to electron–hole droplet (EHD) in silicon-on-insulator (SOI) wafers. The formation of EHD is realized under ultraviolet light excitation because of its shallow penetration depth and the presence of the buried oxide which acts as...

  • Shadowgraphic imaging of the sub-ps laser-induced forward transfer process. Papazoglou, D. G.; Karaiskou, A.; Zergioti, I.; Fotakis, C. // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1594 

    The subpicosecond laser-induced forward transfer process (LIFT) was investigated by means of time-resolved shadowgraphic imaging. The dynamics of the subpicosecond LIFT process of InO[sub χ] was investigated for time delays between 0.01 and 10 µs following laser irradiation pulse....

  • Electronic and chemical changes in shocked liquid carbon disulfide inferred from time resolved reflection experiments and analysis. Gustavsen, R.; Gupta, Y. M. // Journal of Chemical Physics;7/1/1991, Vol. 95 Issue 1, p451 

    Time resolved, spectroscopic reflection measurements (300–500 nm) have been used to examine the electronic and chemical changes in liquid carbon disulfide shocked to peak pressures as high as 110 kbar. Multiple-shock loading and unloading and double-shock experiments were performed to...

  • Photoconductive switches for time-resolved transport measurements at low temperatures and high.... Ernst, G.; Haug, R.J. // Applied Physics Letters;6/24/1996, Vol. 68 Issue 26, p3752 

    Investigates the optimization of metal-semiconductor-metal photodiodes as pulse generators for time-resolved electrical measurements. Use of a laser diode as the light source; Utilization of a heterostructure with gallium arsenide in the photoconductivity analysis; Detection of splitting of the...

  • Time-resolved imaging of radiation recombination in 4H-SiC p-i-n diode. Galeckas, A.; Linnros, J. // Applied Physics Letters;5/31/1999, Vol. 74 Issue 22, p3398 

    Studies the time-resolved imaging of electron-hole recombination radiation from a forward-biased 4H-SiC p-i-n diode. Approach for combining gated charged couple device technique with cross-sectional emission microscopy which is used in the characterization of the device; Visualization of...

  • Diffusive electrical conduction in high-speed p-i-n photodetectors. Schneider, H.; Larkins, E.C.; Ralston, J.D.; Fleissner, J.; Bender, G.; Koidl, P. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2648 

    Reports on time-resolved photocurrent measurements in indium gallium arsenide/gallium arsenide-quantum well p-i-n photodetector structures. Detection of photocurrent at different location in the sample; induction of the temporal broadening of the signal; Significance of the temporal behavior...

  • Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors. Lin, Y. C.; Chung, H. L.; Chou, W. C.; Chen, W. K.; Chang, W. H.; Chen, C. Y.; Chyi, J. I. // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p041909 

    This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces...

  • Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser. Kühn, Eckhard; Thränhardt, Angela; Koch, Stephan W.; Stolz, Wolfgang; Chatterjee, Sangam; Lange, Christoph; Rühle, Wolfgang W.; Wohlleben, Wendel; Motzkus, Marcus // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p011107 

    The time-resolved response of an optically excited vertical-cavity surface-emitting laser is measured for quadratically chirped pump pulses. The experimental results are compared with simulations based on microscopic calculations and qualitatively good agreement is obtained. The theoretical...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics