Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

Ooi, B.S.; Bryce, A.C.
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p85
Academic Journal
Examines the residual damage in fluorine and boron ion implanted GaAs/AlGaAs using transmission electron microscopy. Absence of extended defects in as-implant materials; Presence of dislocation loops in the fluorine implanted and annealed material; Effectiveness of boron and fluorine as a neutral impurity induced disordering applications.


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