Growth and band gap of strained <110> Si[sub 1--x]Ge[sub x] layers on silicon substrates by

Liu, C.W.; Sturm, J.C.
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p76
Academic Journal
Demonstrates the chemical vapor deposition of strained growth Si[sub 1-x]Ge[sub x] alloy layers on Si substrates. Effects of strain on the conduction-band minima in Si[sub 1-x]Ge[sub x]; Impact of the changing direction of strain on the electronic properties on the resulting films; Measurement of photoluminescence using cross sectional transmission electron microscopy.


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