TITLE

Boron and aluminum implantation in alpha-SiC

AUTHOR(S)
Ahmed, S.; Barbero, C.J.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p67
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports comparison of experimental implantation profiles in 6 hydrogen alpha-silicon carbide with theoretical results obtained using TRIM profile simulator. Components in the development of a device process technology based on ion implantation; Conformity of the result with that of TRIM prediction; Discussion on the first four moment of distribution.
ACCESSION #
4227576

 

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