Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam

Ohtani, A.; Stevens, K.S.
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p61
Academic Journal
Investigates wurtzite gallium nitride growth on silicon(111) using aluminum nitrate buffer layers by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Effect of mosaic-type disorder on thickness and temperature; Characterization of plasma particle density and energy; Correlation between plasma particle density and energy.


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