Nitrogen stabilized <100> texture in chemical vapor deposited diamond films

Locher, R.; Wild, C.
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p34
Academic Journal
Examines the influence of nitrogen impurities in CH[sub 4]/h[sub 2] gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor deposition. Usage of optical emission spectroscopy to detect nitrogen in the plasma; Possibility of growing diamond films at low pressures.


Related Articles

  • Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond.... Tae-Yeon Seong; Do-Geun Kim // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3368 

    Examines the bias-enhanced nucleation (BEN) and growth of diamond films by microwave plasma chemical vapor deposition. Use of transmission electron microscopy, transmission electron diffraction, atomic force microscopy and scanning electron microscopy; Epitaxial relations between silicon...

  • Azimuthal rotation of diamond crystals epitaxially nucleated on silicon {001}. Tachibana, T.; Hayashi, K. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1491 

    Presents microwave plasma enhanced chemical vapor deposition of highly oriented diamond films. Development of the growth process of monocrystalline diamond films; Measurement of the tilt and rotation of the diamond crystals; Indication of azimuthal rotations of epitaxially nucleated diamond grains.

  • Fourier transform diagnostics of gaseous species during microwave assisted diamond deposition. Campargue, A.; Chenevier, M.; Fayette, L.; Marcus, B.; Mermoux, M.; Ross, A.J. // Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p134 

    Examines the gaseous species formed during microwave plasma assisted diamond thin film chemical vapor deposition. Use of Fourier transform spectroscopy; Dissociation of methane in the plasma; Recombination products of the dissociation.

  • Power saturation and the effect of argon on the electron spin resonance of diamond deposited.... Lukins, P.B.; Khachan, J. // Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3320 

    Examines the electron spin resonance (ESR) of microwave plasma chemical vapor deposition (CVD) diamond. Correlation of microwave plasma CVD between Raman spectroscopy and ESR spectrum; Use of microwave plasma-assisted CVD apparatus for polycrystalline diamond; Effects of microwave power on CVD...

  • Strong adhesion in nanocrystalline diamond films on silicon substrates. Sharda, T.; Umeno, M.; Soga, T.; Jimbo, T. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4874 

    Strong adhesion is shown to be achieved in the growth of smooth nanocrystalline diamond (NCD) thin films on silicon substrates at 600 °C using biased enhanced growth in microwave plasma chemical vapor deposition. The strong adhesion is evident from the films sustaining compressive stress,...

  • Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study. Whitfield, Michael D.; Jackman, Richard B.; Rodway, Don; Savage, James A.; Foord, John S. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3710 

    Focuses on a study which examined microwave plasma characteristics during bias-enhanced nucleation of diamond. Information on the growth of thin films of diamond by chemical vapor deposition methods; Methodology of the study; Results and discussion.

  • Superconductivity in diamond thin films well above liquid helium temperature. Takano, Yoshihiko; Nagao, Masanori; Sakaguchi, Isao; Tachiki, Minoru; Hatano, Takeshi; Kobayashi, Kensaku; Umezawa, Hitoshi; Kawarada, Hiroshi // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2851 

    We report unambiguous evidence for superconductivity in a heavily boron-doped diamond thin film grown by microwave plasma-assisted chemical vapor deposition (MPCVD). An advantage of the MPCVD-deposited diamond is that it can contain boron at high concentration, especially in (111)-oriented...

  • Ultrahigh boron doping of nanocrystalline diamond films and their electron field emission characteristics. Jiang, X.; Au, Frederick C. K.; Lee, S. T. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2880 

    Heavily boron-doped nanocrystalline (nc) diamond films were deposited using microwave plasma chemical vapor deposition process in which the growing film surface was continuously bombarded by H[sup +] and hydrocarbon ions. The dependency of grain size and phase purity on the process parameters...

  • Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films. Liu, Chao; Xiao, Xingcheng; Wang, Jian; Shi, Bing; Adiga, Vivekananda P.; Carpick, Robert W.; Carlisle, John A.; Auciello, Orlando // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074115 

    Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH4 gas mixture used in the microwave plasma...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics