Accurate multiple-quantum-well growth using real-time optical flux monitoring

Chalmers, S.A.; Killeen, K.P.
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p4
Academic Journal
Demonstrates a real-time molecular beam epitaxy control system based on optical flux monitoring (OFM) capable of producing thin aluminum arsenide/ gallium arsenide layers of accurate thickness. Capability of detecting growth rate variations; Existence of multiple photoluminescence in samples without OFM; Effects of OFM-based shutter control on layer thickness.


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