Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption

Sato, Kenji; Wakita, Koichi
July 1994
Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p1
Academic Journal
Describes an active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells. Role of electroabsorption modulator as a short optical gate; Process used in obtaining pulse widths as short as 2 ps; Small signal response of the device.


Related Articles

  • Phase-locked shallow mesa graded barrier quantum well laser arrays. Mawst, L. J.; Givens, M. E.; Emanuel, M. A.; Zmudzinski, C. A.; Coleman, J. J. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1337 

    Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index-guided shallow mesa laser arrays. Single-stripe devices have threshold currents as low as 14 mA (533 μm length) and ten-element arrays have threshold currents...

  • 108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber. Sanders, Steve; Eng, Lars; Paslaski, Joel; Yariv, Amnon // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p310 

    A two-section multiple quantum well laser is passively mode locked without an external cavity at ∼108 GHz. The pulse widths average 2.4 ps and have a time-bandwidth product of 1.1. Self-pulsations at frequencies up to 8 GHz are also observed.

  • Observation of very efficient hybrid mode locking in an InGaAs/InGaAsP multiple quantum well.... Kim, Dug Y.; Dong-Sun Seo // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3075 

    Investigates an efficient mode-locking method in a multiple quantum well distributed Bragg reflector laser. Explanation of the mechanism governing the observed mode-locking process; Application of low radio frequency seeding power to the saturable section of the laser; Observation of the...

  • Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laser. Wu, M. C.; Chen, Y. K.; Tanbun-Ek, T.; Logan, R. A.; Chin, M. A.; Raybon, G. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p759 

    We report the generation of short optical pulses from novel monolithic colliding-pulse mode-locked quantum well lasers. Transform-limited pulses with durations of 1.4 ps at a repetition rate of 32.6 GHz have been achieved, with nearly 100% intensity modulation depth and a peak optical power of...

  • Coherent beams from high efficiency two-dimensional surface-emitting semiconductor laser arrays. Gourley, P.L.; Warren, M.E.; Hadley, G.R.; Vawter, G.A.; Brennan, T.M.; Hammons, B.E. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p890 

    Discusses the fabrication and operation of large two-dimensional arrays of phase-locked surface-emitting semiconductor lasers. Reactive ion beam etching of epitaxial Fabry-Perot resonators comprising gallium arsenide/aluminum gallium arsenide quantum wells surrounded by quarter-wave mirrors;...

  • Multiple quantum well passive mode locking of a NaCl color center laser. Islam, M. N.; Sunderman, E. R.; Bar-Joseph, I.; Sauer, N.; Chang, T. Y. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1203 

    Using multiple quantum well (MQW) saturable absorbers, we passively mode locked a NaCl color center laser to produce transform-limited, pedestal-free pulses with τ as short as 275 fs and peak power as high as 3.7 kW. Because of exciton ionization with a 200±30 fs time constant, the MQW...

  • Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser. Brennan, M. J.; Milgram, J. N.; Mascher, P.; Haugen, H. K. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2502 

    Optical pulses are generated from a passively mode-locked dual asymmetric-quantum-well semiconductor laser mounted in a linear external cavity. The devices are fabricated with two sections, one of which contains a bend in the waveguide for external cavity coupling. Pulses 2.0-3.9 ps in duration...

  • Active mode locking of lasers by piezoelectrically induced diffraction modulation. Krausz, F.; Turi, L.; Kuti, Cs.; Schmidt, A. J. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1415 

    A new amplitude-modulation mode-locking technique is presented. Acoustic waves are generated directly on the faces of a resonant photoelastic medium. The created standing waves cause a highly efficient diffraction modulation of light. The modulation depth of standing-wave mode lockers is related...

  • A frequency-modulated injection-locked diode laser for two-frequency generation. Kowalski, R.; Root, S.; Gensemer, S. D.; Gould, P. L. // Review of Scientific Instruments;Jun2001, Vol. 72 Issue 6, p2532 

    We demonstrate that two-frequency laser light can be generated by rapid current modulation of a diode laser which is injection locked to a separate frequency-stabilized diode laser. First-order sidebands containing at least 2% of the power in the carrier are produced for modulation frequencies>7...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics