Phosphorus doping of epitaxial Si and Si[sub 1-x]Ge[sub x] at very low pressure

Syun-Ming Jang; Liao, Kenneth
September 1993
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1675
Academic Journal
Investigates in situ doping of silicon and Si[sub 1-x]Ge[sub x] layers using PH[sub 3]. Decrease of epitaxial growth rates with phosphorus (P) doping; Effect of incorporating P into the growing film; Improvement of the concentration range and profile definition of P.


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