TITLE

Phosphorus doping of epitaxial Si and Si[sub 1-x]Ge[sub x] at very low pressure

AUTHOR(S)
Syun-Ming Jang; Liao, Kenneth
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates in situ doping of silicon and Si[sub 1-x]Ge[sub x] layers using PH[sub 3]. Decrease of epitaxial growth rates with phosphorus (P) doping; Effect of incorporating P into the growing film; Improvement of the concentration range and profile definition of P.
ACCESSION #
4227543

 

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