TITLE

Electron spin resonance study of the dangling bond in amorphous Si and porous Si

AUTHOR(S)
McMahon, T.J.; Xiao, Y.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1657
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines electron spin resonance (ESR) signal of the dangling bond in amorphous silicon and porous silicon (PS). Anisotropy of the ESR signal from PS; Incorporation of a dangling bond in a growing disordered material; Process of stripping away material to produce a dangling bond in an ordered crystal.
ACCESSION #
4227537

 

Related Articles

  • Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films. Carlos, W. E. // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1450 

    Electron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer. The 29Si central hyperfine...

  • Pentavacancies in plastically deformed silicon. Brohl, M.; Kisielowski-Kemmerich, C.; Alexander, H. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1733 

    High-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in...

  • Detection of paramagnetic recombination centers in proton-irradiated silicon. Vlasenko, L. S.; Vlasenko, M. P.; Kozlov, V. A.; Kozlovskii, V. V. // Semiconductors;Oct99, Vol. 33 Issue 10, p1059 

    The method of spin-dependent recombination was used to record electron spin resonance (ESR) spectra of recombination centers in a thin (~1�m) surface layer of p-type silicon grown by the Czochralski method and irradiated by protons with energies of ~100 keV. Spectra of excited triplet...

  • Spatial distribution of light-induced defects in hydrogenated amorphous silicon. Jiang-Huai Zhou; Kumeda, Minoru // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p742 

    Investigates the spatial distribution of defects in light-soaked hydrogenated amorphous silicon. Details on light soaking; Role of the electron spin resonance in the measurement of defects; Impact of the Staebler-Wronski effect on the regions close to the surface and deep in the bulk.

  • Fundamental chemical differences among P[sub b] defects on (111) and (100) silicon. Stathis, J.H.; Dori, L. // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1641 

    Studies fundamental chemical differences among P[subb] defects on (111) and (100) silicon, using electron spin resonance. Structure of the P[subb] center as a silicon dangling bond; Effect of thermal treatments on P[subb] signals; Mechanism by which dangling bonds are passivated.

  • Paramagnetic defects in ultrafine silicon particles. Dohi, Minoru; Yamatani, Hiroshi; Fujita, Tetsuo // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p815 

    Two defects in the surface oxide layer of ultrafine Si particles, temporarily named an EX[sub L] center and an EX[sub H] center, were investigated by electron spin resonance (ESR). The Si particles were prepared by a conventional gas evaporation method. The specimens were exposed to air at room...

  • Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous.... Mao, J.C.; Jia, Y.Q.; Fu, J.S.; Wu, E.; Zhang, B.R.; Zhang, L.Z.; Qin, G.G. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1408 

    Examines the electron paramagnetic resonance (EPR) observation of trigonally symmetric Si dangling bonds in porous silicon layers. Indication of the EPR signal rotational pattern; Existence of crystalline Si phase; Parallelism between dangling bond formation and surface oxidation.

  • Electron-paramagnetic-resonance study of heat-treatment centers in n-type silicon. Bekman, H. H. P. Th.; Gregorkiewicz, T.; van Wezep, D. A.; Ammerlaan, C. A. J. // Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4404 

    Focuses on a study which examined the donor formation in heat-treated phosphorus-doped Czochralski-grown silicon by electron paramagnetic resonance and resistivity measurements. Proposal for oxygen clusters in thermal donors; Function of annealing time; Kind of transformation that the Si-NL10...

  • Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study. Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A. // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3435 

    Focuses on a study which investigated monoclinic 1-platinum defects in silicon by electron paramagnetic resonance. Information on self-interstitial related defects; Methodology of the study; Results and discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics