TITLE

Synthesis and luminescence of silicon remnants formed by truncated glassmelt-particle reaction

AUTHOR(S)
Risbud, Subhash H.; Li-Chi Liu
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1648
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the creation of nanometer sized silicon trapped in a glass matrix based on complete reaction of silicon agglomerates with a viscous molten silicate liquid. Termination of the silicon-melt reaction after variable times; Remnants of pure silicon cores showing green luminescence; Observation of reddish luminescence in porous silicon.
ACCESSION #
4227534

 

Related Articles

  • On the formation process of luminescing centers in spark-processed silicon. Ludwig, M. H.; Augustin, A.; Hummel, R. E.; Gross, Th. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5318 

    Focuses on a study which investigated how the formation process effects the luminescing properties of spark-processed silicon. Experimental procedures; Results and discussion; Conclusions.

  • Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on.... Rao, K.S.R.K.; Sreedhar, A.K. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1458 

    Observes fine structure in the 1.4 eV luminescence band of thin amorphous silicon layers deposited on silicon substrates. Separation of energy between the peaks; Nature of the fine structure and the peak energies in films deposited at different substrate temperature; Dependence of the...

  • Effect of dangling-bond density on luminescence in tritiated amorpous silicon. Sidhu, Lakhbeer S.; Kosteski, Tome // Applied Physics Letters;6/28/1999, Vol. 74 Issue 26, p3975 

    Studies the effect of dangling-bond density on luminescence in tritiated amorphous silicon. Films' exhibition of weak low-temperature self-luminescence associated with radiative recombination of electron-hole pairs created by the energetic Beta particles.

  • Unimportance of siloxene in the luminescence of porous silicon. Friedman, S.L.; Marcus, M.A.; Adler, D.L.; Xie, Y.-H; Harris, T.D.; Citrin, P.H. // Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1934 

    Examines the role of siloxene in the luminescence of porous silicon (Si). Observation of near-edge and extended-x-ray absorption fine structure measurements; Preparation of the samples by anodic oxidation; Ways of testing the importance of siloxene in Si luminescence.

  • Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules. Kuznetsov, S. N.; Pikulev, V. B.; Saren, A. A.; Gardin, Yu. E.; Gurtov, V. A. // Semiconductors;May2001, Vol. 35 Issue 5, p583 

    A new effect of the excitation of luminescence in porous silicon during adsorption of ozone from the gaseous phase was investigated. The signals of ozone-induced luminescence and photoluminescence decay with time of ozone exposure in a strictly correlated way; simultaneously, an oxide-phase...

  • Annealing of Deep Boron Centers in Silicon Carbide. Ballandovich, V. S.; Mokhov, E. N. // Semiconductors;Feb2002, Vol. 36 Issue 2, p160 

    The effect of annealing on the efficiency of high-temperature luminescence of 6H-SiC samples grown under varied conditions and doped with boron was studied. A part of the samples was subjected to neutron or fast-electron irradiation. It is shown that the efficiency of high-temperature...

  • Luminescence of porous silicon in a weak confinement regime. Polisski, G.; Heckler, H.; Kovalev, D.; Schwartzkopff, M.; Koch, F. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    We report on luminescence properties of porous silicon emitting efficient light only a few tens of meV above the band gap of bulk Si. This emission band has a well-defined low-energy limit coincident with the position of the lowest possible luminescing exciton state of bulk silicon. The resonant...

  • Mechanism of photoluminescence of Si nanocrystals fabricated in a SiO[sub 2] matrix. Zhuravlev, K. S.; Gilinsky, A. M.; Kobitsky, A. Yu. // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    The luminescence properties of silicon nanocrystals fabricated by Si ion implantation into a SiO[sub 2] matrix and subsequent thermal annealing have been studied. To identify the mechanism of photoluminescence of Si nanocrystals, the dependencies of the steady-state photoluminescence on...

  • Theoretical analysis of the geometries of the luminescent regions in porous silicon. Hill, Nicola A.; Whaley, K. Birgitta // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1125 

    Analyzes the geometries of luminescent regions in porous silicon. Calculation of luminescence energies of crystalline silicon nanostructures; Correlation between luminescence wavelength and shape of emitting nanostructures; Information on the electrical properties of silicon nanostructures.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics