TITLE

Charge trapping and device degradation induced by x-ray irradiation in metal-oxide-semiconductor

AUTHOR(S)
Campbell, S.A.; Lee, K.H.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1646
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines oxide charge trapping and interface trap generation by hot carrier stress using x-ray irradiated metal-oxide-semiconductor field effect transistors. Susceptibility of irradiated devices to damage under hot carrier stressing; Quantification of latent damage using gate voltage hot carrier stresses; Relation of latent damage to oxide hole traps.
ACCESSION #
4227533

 

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