TITLE

Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the mask

AUTHOR(S)
Ozasa, Kazunari; Tianchun Ye
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1634
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates selective epitaxy of gallium arsenide (GaAs) on indium-oxide films prepared by vacuum deposition. Suppression of GaAs deposition on the oxide; Basis for choosing indium oxide as the mask material; Examination of the selectivity of indium oxide for the epitaxy of GaAs by chemical beam epitaxy.
ACCESSION #
4227529

 

Related Articles

  • Very low current threshold GaAs/Al0.5Ga0.5As double-heterostructure lasers grown by chemical beam epitaxy. Tsang, W. T. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p511 

    The first device performance of GaAs/AlxGa1-xAs double-heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities of ∼500 A/cm2 were obtained for wafers with active layer thicknesses of ∼500–1000 Å and confinement...

  • Self-limiting mechanism in the atomic layer epitaxy of GaAs. Tischler, M. A.; Bedair, S. M. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1681 

    A self-limiting mechanism has been observed in the atomic layer epitaxy (ALE) of GaAs deposited by alternate exposure to AsH3 and trimethylgallium (TMG). The thickness of the deposited film was found to be independent of the mole fractions of both TMG and AsH3 in the gas phase. These results...

  • Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si. Shastry, S. K.; Zemon, S. // Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p467 

    The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si...

  • Damage calculation and measurement for GaAs amorphized by Si implantation. Opyd, W. G.; Gibbons, J. F.; Bravman, J. C.; Parker, M. A. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p974 

    Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si+ implants at liquid-nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 °C. Rutherford backscattering spectrometry and transmission...

  • Growth of high-quality GaAs using trimethylgallium and diethylarsine. Bhat, R.; Koza, M. A.; Skromme, B. J. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1194 

    In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600...

  • Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy. Kobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1435 

    Atomic layer doping of p-type carbon impurity in GaAs was demonstrated using flow-rate modulation epitaxy. An extremely narrow capacitance-voltage profile with 5.8 nm full width at half-maximum is observed in the wafer with a sheet hole density of 9.5×1011 cm-2. Atomic layer doping of carbon...

  • Photocurrent enhancement in a GaAs metal-semiconductor-metal photodetector due to ultrasmall Au islands. Koscielniak, W. C.; Kolbas, R. M.; Littlejohn, M. A.; Licznerski, B. W. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p987 

    A new GaAs metal-semiconductor-metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal-semiconductor-metal devices at a bias...

  • Lateral growth of GaAs over W by selective liquid phase epitaxy. Chung, Ki-Woong; Kwon, Young-Se // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1716 

    The GaAs/W/GaAs structures were made by selective liquid phase epitaxy which was simply explained by the diffusion-limited growth. The growth was independent of the direction of metal stripes. Using this method, a diode was fabricated and has shown good electrical characteristics.

  • Temperature effects on the photoluminescence of GaAs grown on Si. Chen, Y.; Freundlich, A.; Kamada, H.; Neu, G. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p45 

    Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are...

  • Local-Field Effects in Reflectance Anisotropy Spectra of the (001) Surface of Gallium Arsenide. Berkovits, V. L.; Gordeeva, A. B.; Kosobukin, V. A. // Physics of the Solid State;Jun2001, Vol. 43 Issue 6, p1018 

    Characteristic reflectance anisotropy spectra of the naturally oxidized (001) surfaces of GaAs undoped crystals and Ga[sub 0.7]Al[sub 0.3]As epitaxial films are measured in the energy range 1.5-5.7 eV. The spectra are interpreted in the framework of the microscopic model proposed for a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics