TITLE

Dislocation networks in Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub y] single crystals

AUTHOR(S)
Shang, P.; Yang, G.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p827
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dislocation networks in Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub y] single crystals through transmission electron microscopy. Details on the geometrical configuration of the crystal structures; Ratio between the stacking fault energy and shear modulus; Contention on dislocation networks as planar pinning centers for flux in superconducting state.
ACCESSION #
4227505

 

Related Articles

  • A phenomenological description of strain relaxation in GexSi1-x/Si(100) heterostructures. Hull, R.; Bean, J. C.; Buescher, C. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5837 

    Presents information on a study which analyzed the strain relaxation of Ge[subx]Si[sub1-x](100) heterostructures in a transmission electron microscope to obtain the fundamental parameters which describe the nucleation, propagation and interaction of misfit dislocations. Structure of existing...

  • Misfit dislocation structure at a Si/SixGe1-x strained-layer interface. Rajan, Krishna; Denhoff, Mike // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1710 

    Focuses on a study which characterized the misfit dislocation structure at a Si/Si[0.75] Ge[0.25] strained-layer interface by transmission electron microscopy. Crystal growth; Characteristics of misfit dislocations; Dislocation multiplication; Conclusions.

  • Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire. Ruvimov, Sergei; Liliental-Weber, Zuzanna; Suski, Tadeusz; Ager, Joel W.; Washburn, Jack; Krueger, Joachim; Kisielowski, Christian; Weber, Eicke R.; Amano, H.; Akasaki, I. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p990 

    Transmission electron microscopy, x-ray diffraction, low-temperature photoluminescence, and Raman spectroscopy were applied to study stress relaxation and the dislocation structure in a Si-doped GaN layer in comparison with an undoped layer grown under the same conditions by metalorganic vapor...

  • Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs. Ooi, B.S.; Bryce, A.C. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p85 

    Examines the residual damage in fluorine and boron ion implanted GaAs/AlGaAs using transmission electron microscopy. Absence of extended defects in as-implant materials; Presence of dislocation loops in the fluorine implanted and annealed material; Effectiveness of boron and fluorine as a...

  • Multiple dislocation loops in linearly graded In[sub x]Ga[sub 1-x]As (0...X...0.53) on GaAs and.... Chang, J.C.P.; Chin, T.P.; Tu, C.W.; Kavanagh, K.L. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p500 

    Observes the appearance of multiple dislocation loops in lattice mismatched III-V semiconductor systems. Use of transmission electron microscopy; Growth of the sample by gas-source molecular beam epitaxy; Influence of threading dislocation density on the loop appearance; Relation between the...

  • Nonconservative formation of <100> misfit dislocation arrays at.... Chen, Y.; Liliental-Weber, Z. // Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2234 

    Investigates the effect of annealing on misfit dislocations in In[sub 0.2]Ga[sub 0.8]As/gallium arsenide (GaAs) heterostructure. Observation of 60 degrees dislocation arrays in the interface; Use of transmission electron microscopy; Diffusion of dislocation segments along the cores or in the...

  • Technique to suppress dislocation formation during high-dose oxygen implantation of Si. Holland, O.W.; Thomas, D.K. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1892 

    Presents a practical technique for suppressing dislocation formation during high-dose oxygen implantation of single-crystal silicon. Use of transmission electron microscopy and Rutherford backscattering/channeling spectrometry; Elimination of vacancy defects and concomitant strain in the...

  • Dislocation bundle formation during liquid encapsulated Czochralski growth of GaAs crystals. Ono, Haruhiko; Matsui, Junji // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p801 

    Residual dislocations in a P-alloyed and an undoped GaAs crystal grown by the liquid encapsulated Czochralski method were investigated by transmission electron microscopy. In the undoped GaAs, dislocation bundles constructing cell walls and/or lineages consist of at least three different Burgers...

  • Morphology definition by disclinations and dislocations in a mesostructured silicate crystal. Feng, J.; Huo, Q. // Applied Physics Letters;9/29/1997, Vol. 71 Issue 13, p1887 

    Examines the disclinations and dislocations in a mesostructured silicate crystals. Use of transmission electron microscopy; Types of dislocations and disclinations; Provision of information on the synthesis and transformation occurring on the condensation of the silica phase.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics