TITLE

Optimization of the growth parameters for the molecular-beam epitaxial growth of strained

AUTHOR(S)
Emeny, M.T.; Skolnick, M.S.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p824
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optical properties of indium gallium arsenide/aluminum gallium arsenide quantum well structures grown by molecular beam epitaxy. Optimization of the growth parameters; Details on the photoluminescence linewidths; Reduction of aluminum surface mobility.
ACCESSION #
4227504

 

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