TITLE

Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy

AUTHOR(S)
Brierley, Steven K.; Hendriks, Henry T.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p812
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence of boron-doped gallium arsenide (GaAs) films grown by molecular beam epitaxy. Presence of boron-related peaks in the spectra; Identification of double acceptor in GaAs films; Determination of energy gap and activation energies.
ACCESSION #
4227500

 

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