TITLE

Low-temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction

AUTHOR(S)
Kai Zhang; Der-Woei Wu
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p809
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of migration enhanced epitaxy (MEE) to grow aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) heterojunction bipolar transistors. Evidence for beryllium diffusion into AlGaAs emitter; Presence of common-emitter current gain in the device; Impact of MEE on the quality of crystalline structures.
ACCESSION #
4227499

 

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