Anomalous photoluminescence behavior of porous Si

Stevens, P.D.; Glosser, R.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p803
Academic Journal
Investigates the photoluminescence behavior of porous silicon etched with high acid concentrations. Mechanism for increasing photoluminescence intensity; Degradation of photoluminescence intensity at higher point density; Excitation of metastable states within the band structure of porous silicon.


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