TITLE

Determination of silicon point defect properties from oxidation enhanced diffusion of buried layers

AUTHOR(S)
Agarwal, Anuradha M.; Dunham, Scott T.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p800
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the silicon point defect properties from enhanced diffusion of phosphorus buried layers. Employment of interstitial injection through thermal oxidation of the wafer surface; Calculation of interstitial diffusivity in epitaxial silicon; Dependence of diffusivity enhancement on the distance of the buried layer.
ACCESSION #
4227496

 

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