Determination of silicon point defect properties from oxidation enhanced diffusion of buried layers

Agarwal, Anuradha M.; Dunham, Scott T.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p800
Academic Journal
Determines the silicon point defect properties from enhanced diffusion of phosphorus buried layers. Employment of interstitial injection through thermal oxidation of the wafer surface; Calculation of interstitial diffusivity in epitaxial silicon; Dependence of diffusivity enhancement on the distance of the buried layer.


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