TITLE

Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum

AUTHOR(S)
Gillin, W.P.; Rao, S.S.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p797
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the vacancy controlled interdiffusion of group V sublattice in strained indium gallium arsenide/indium gallium arsenic phosphide quantum wells. Details on the photoluminescence spectra of arsenic and phosphorus; Determination of diffusion coefficient and activation energy; Calculation of Schrodinger equation for conduction and valence band energy.
ACCESSION #
4227495

 

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