Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum

Gillin, W.P.; Rao, S.S.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p797
Academic Journal
Examines the vacancy controlled interdiffusion of group V sublattice in strained indium gallium arsenide/indium gallium arsenic phosphide quantum wells. Details on the photoluminescence spectra of arsenic and phosphorus; Determination of diffusion coefficient and activation energy; Calculation of Schrodinger equation for conduction and valence band energy.


Related Articles

  • Intermixing in GaAsSb/GaAs single quantum wells. Khreis, O.M.; Homewood, K.P. // Journal of Applied Physics;10/1/1998, Vol. 84 Issue 7, p4017 

    Presents a study which investigated the interdiffusion process of GaAsSb/GaAs single quantum wells, using photoluminesence. Details on the solving of the diffusion equations and the Schrodinger equation; In-depth look at the InGaAs materials; Methodology used to conduct the study; Results of the...

  • Approximate analytic solution for electronic wave functions and energies in coupled quantum wells. Yariv, Amnon; Lindsey, Chris; Sivan, Uri // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3669 

    Presents an analytical approach for solving the Schrödinger equation of coupled quantum well structures. Plot of the potential energy function of model problem; Basic physical parameter determining the electron localization.

  • Enhancement of photoluminescence intensity in InGaAs/Al[sub x]Ga[sub 1-x]As quantum wells by.... Lord, S.M.; Roos, G. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2276 

    Examines the effect of diffusion of monatomic hydrogen on photoluminescence in the indium gallium arsenide (GaAs)/aluminium GaAs system. Influence of molecular beam epitaxy on the growth of quantum wells; Use of deep level transient spectroscopy; Factors affecting the enhancement of...

  • Background Si-doping effects on Zn diffusion-induced disordering in GaAs/AlGaAs multiple-quantum-well structures. Nguyen Hong Ky; Ganière, J. D.; Reinhart, F. K.; Blanchard, B. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4009 

    Presents a study that investigated the dependence of the zinc diffusion-induced disordering of gallium arsenide/Al[sub0.2]Ga[sub0.8]As multiple-quantum-well (MQW) structures on their background silicon-doping level. Procedures for the preparation of MQW structures; Different regions of the...

  • Dwell time in doped double-barrier heterostructures. Pandey, Lakshmi N.; George, Thomas F. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p1855 

    Provides information on a time-dependent Schrödinger equation for a double-barrier and a quantum-well resonant tunneling structure. Replacements for delta-function potentials; Application of the finite difference method; Transport properties of an electron.

  • Exciton states in strongly coupled asymmetric semimagnetic double quantum dots. Zaitsev, S. V.; Welsch, M. K.; Forchel, A.; Bacher, G. // JETP Letters;12/15/2006, Vol. 84 Issue 8, p436 

    Exciton states in a pair of strongly coupled artificial asymmetric quantum dots (QDs) have been studied in magnetic fields up to B = 8T by means of photoluminescence spectroscopy. The QD molecules have been fabricated using a selective interdiffusion technique applied to asymmetric...

  • Excitonic spectrum of the ZnO/ZnMgO quantum wells. Bobrov, M.; Toropov, A.; Ivanov, S.; El-Shaer, A.; Bakin, A.; Waag, A. // Semiconductors;Jun2011, Vol. 45 Issue 6, p766 

    Excitonic spectrum of the wurtzite ZnO/ZnMgO quantum wells with a width on the order of or larger than the Bohr radius of the exciton has been studied; the quantum wells have been grown by the method of molecular beam epitaxy (with plasma-assisted activation of oxygen) on substrates of sapphire...

  • Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1-xAs quantum wells. Lord, S. M.; Roos, G.; Harris, J. S.; Johnson, N. M. // Journal of Applied Physics;1/15/1993, Vol. 73 Issue 2, p740 

    Focuses on a study which examined the effects of diffusion on monatomic hydrogen and deuterium in InGaAs/AlGaAs quantum wells using photoluminescence (PL) and secondary-ion-mass spectroscopy. Experimental procedures; Samples used in the study; Results of the study.

  • Optical methods for determining diffusion in magnetic quantum-well structures. Stirner, T.; Harrison, P.; Hagston, W. E. // Journal of Applied Physics;2/1/1995, Vol. 77 Issue 3, p1314 

    Examines the influence of the occurrence of magnetic polaron on the values of the diffusion constants deduced from observations of the photoluminescence in diffused magnetic quantum-well structures. Application of photoluminescence excitation spectroscopy; Change in the properties of diffusion...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics