Systematics of electron mobility in Si/SiGe heterostructures

Nelson, S.F.; Ismail, K.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p794
Academic Journal
Investigates the electron mobility in modulation-doped silicon/silicon germanide heterostructures grown by vacuum chemical vapor deposition. Presence of interface roughness in samples; Correlation between the thickness of buffer layer and electron mobility; Impact of background impurities on electron mobility.


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