TITLE

Systematics of electron mobility in Si/SiGe heterostructures

AUTHOR(S)
Nelson, S.F.; Ismail, K.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p794
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electron mobility in modulation-doped silicon/silicon germanide heterostructures grown by vacuum chemical vapor deposition. Presence of interface roughness in samples; Correlation between the thickness of buffer layer and electron mobility; Impact of background impurities on electron mobility.
ACCESSION #
4227494

 

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