Space-charge effects in photovoltaic double barrier quantum well infrared detectors

Schneider, H.; Larkins, E.C.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p782
Academic Journal
Examines the space charge effects in photovoltaic double barrier quantum well infrared detectors. Role of the spatial distribution of the dopants in the transport asymmetry of the photocurrent; Transport of photoexcited electron towards the substrate; Characteristics of photocurrent responsivity.


Related Articles

  • Carrier deep-trapping mobility-lifetime products in poly(p-phenylene vinylene). Antoniadis, H.; Abkowitz, M.A. // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2030 

    Details the transport limitation of a single layer poly(p-phenylene vinylene) electroluminescence device. Quantification of transport range of electrons and holes; Deduction of deep-trapping mobility-lifetime products; Execution of space-charged-limited current measurement in bilayer devices.

  • Space-charge-limited conduction in Si n+–i–n+ homojunction far-infrared detectors. Yuan, H. X.; Perera, A. G. U. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4418 

    Presents a study which examined space-charge-limited (SCL) conduction in silicon homojunction interfacial work-function internal photoemission far-infrared detectors. Description of the analytic model; Calculation of the barrier shape and free-carrier concentration distribution and their...

  • A five-period normal-incidence (ln, Ga) As/GaAs quantum-dot infrared photodetector. Pan, Dong; Towe, Elias; Kennerly, Steve // Applied Physics Letters;11/1/1999, Vol. 75 Issue 18, p2719 

    Measures the optical and electrical properties of a five-period normal incidence quantum dots for long wavelength infrared photodetectors. Occurrence of primary intersubband transition peak; Electron transport performance and peak detectivity; Maximum responsivity to an observed avalanche gain.

  • Monte Carlo study of photogenerated carrier transport in GaAs surface space-charge fields. Zhou, Xing; Hsiang, Thomas Y.; Miller, R. J. Dwayne // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3066 

    Discusses a study which presented a self-consistent ensemble Monte Carlo particle model that would simulate the dynamics of photogenerated carrier transport in GaAs surface space-charge fields. List of transport parameters; Cause of the photocarrier-induced change in the electric field;...

  • Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices. Umana-Membreno, G. A.; Klein, B.; Kala, H.; Antoszewski, J.; Gautam, N.; Kutty, M. N.; Plis, E.; Krishna, S.; Faraone, L. // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p253515 

    Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II superlattices for long wavelength infrared (LWIR) detection have been extracted from magnetic field dependent geometrical magneto-resistance. The measurements, performed at low electric fields and at magnetic...

  • Subpicosecond reflective electro-optic sampling of electron-hole vertical transport in surface-space-charge fields. Min, Lixing; Miller, R. J. Dwayne // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p524 

    A new method of electro-optic sampling field transients, using above-band-gap optical probes in reflection, is analyzed theoretically and experimentally demonstrated to be within a factor of 2 as sensitive as electro-optic sampling in transmission. The technique is ideally suited to the study of...

  • Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics. Konno, K.; Matsushima, O.; Navarro, D.; Miura-Mattausch, M. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1398 

    We have investigated the photoresponse of a Si p–n photodiode under different illumination and bias conditions. Under high illumination and low applied reverse bias, a clear discrepancy between experimental results and conventional two-dimensional device simulation results is observed....

  • Space charge limited electron transport in AlGaN photoconductors. Lebedev, V.; Cherkashinin, G.; Ecke, G.; Cimalla, I.; Ambacher, O. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p033705 

    Electrical properties and photoresponse of AlGaN based photodetectors were studied demonstrating an adverse effect of the broad-band trap distribution on the spectral, electrical, and time-response characteristics. It was found that n-type conduction mechanism is space charge limited indicating...

  • DNA-modified indium phosphide Schottky device. Güllü, Ömer; Çankaya, Murat; Barış, Özlem; Türüt, Abdulmecit // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p212106 

    High quality Schottky sandwich devices were fabricated on an InP single crystal by solution processing a semiconducting polymer, DNA, as the metal electrodes. We observed that DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.26, and that DNA...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics