TITLE

Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in

AUTHOR(S)
Hoe Sup Soh; Choochon Lee
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p779
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the space charge limited effect in hydrogenated amorphous silicon thin-film transistors. Determination of the density of states at the Fermi level; Increase in drain current caused by space charge limited current flow; Attribution of interface charges to the formation of electron accumulation layer.
ACCESSION #
4227489

 

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