Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for

Hernandez, J.M.; Izpura, I.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p773
Academic Journal
Examines the piezoelectric-induced current asymmetry in indium gallium arsenide/indium aluminum arsenide resonant tunneling diodes. Formation of accumulation and depletion regions in the contact layers; Reduction of resonance voltages for forward and reverse bias; Distribution of the piezoelectric field.


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