Segregation of Si delta doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in

Liu, H.C.; Wasilewski, Z.R.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p761
Academic Journal
Examines the segregation of silicon atoms in multiple quantum well intersubband photodetectors (QWIP). Asymmetry in the current-voltage characteristics of intersubband infrared detectors; Use of delta doping to create the electron population of QWIP; Shift in the position of silicon delta doping.


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