TITLE

Ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures

AUTHOR(S)
Walker, A.J.; Politiek, J.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p758
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures. Implantation of germanium ions into the polycrystalline silicon layer; Reduction of Fowler-Nordheim (FN) tunneling barrier at the gate/oxide interface; Application of FN tunneling to nonvolatile memory devices.
ACCESSION #
4227482

 

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