Dopant migration and lateral p-n junctions in metalorganic vapor phase epitaxy of AlGaAs on

Wang, T.Y.; Heath, L.S.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p755
Academic Journal
Examines the lateral junctions in aluminum gallium arsenide (AlGaAs) structures grown by metalorganic vapor phase epitaxy. Role of dopant migration in the distribution of dopant atoms; Details on the dopant concentration and geometry of the ridges; Enhancement of dopant diffusion in AlGaAs structures.


Related Articles

  • Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy. Neudeck, P.G.; Kleine, J.S.; Sheppard, S.T.; McDermott, B.T.; Bedair, S.M.; Cooper Jr., J.A.; Melloch, M.R. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p83 

    Reports on the electrical characterization of GaAs PiN junction diodes grown over the sidewalls of patterned trenches by atomic layer epitaxy. Rectifying behavior of the diodes; Characterization of the sidewall material.

  • Electrical and structural properties of Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunctions grown by.... Paloura, E.C.; Ginoudi, A. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2749 

    Examines the electrical and structural properties of undoped and selenium-doped Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy (MOVPE). Use of deep-level transient spectroscopy and transmission electron microscopy; Characterization of undoped MOVPE by a...

  • The Dislocation Origin and Model of Excess Tunnel Current in GaP p�n Structures. Evstropov, V. V.; Dzhumaeva, M.; Zhilyaev, Yu. V.; Nazarov, N.; Sitnikova, A. A.; Fedorov, L. M. // Semiconductors;Nov2000, Vol. 34 Issue 11, p1305 

    An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I-V) characteristic (in lnI-V coordinates) is independent of the width of the space-charge region, i.e.,...

  • Epitaxial InAs-coupled superconducting junctions. Akazaki, Tatsushi; Kawakami, Tsuyoshi; Nitta, Junsaku // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p6121 

    Presents study which investigated homoepitaxial n-type InAS-coupled superconducting junctions. Experimental; Discussion; Conclusion.

  • Lateral p-n junctions in metal-organic vapor-phase epitaxy of AlGaAs lasers on GaAs substrates.... Wang, T.Y. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1368 

    Examines the formation of lateral p-n junctions in aluminum gallium arsenide lasers grown on gallium arsenide substrates by metalorganic vapor phase epitaxy. Presence of a current-blocking layer on the lasers; Formation of conducting channels over the etched ridges of the substrates;...

  • Electrical properties of shallow p[sup +]-n junction using boron-doped Si[sub 1-x]Ge[sub x] layer deposited by ultrahigh vacuum chemical molecular epitaxy. Huang, Hsiang-Jen; Chen, Kun-Ming; Chang, Chun-Yen; Chao, Tien-Sheng; Huang, Tiao Yuan // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5133 

    Strained boron-doped Si[sub 1-x]Ge[sub x] layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p[sup +]-n junction suitable for raised source/drain metal-oxide-semiconductor field effect transistor applications....

  • InGaAs/InAsPSb diode lasers with output wavelengths at 2.52 μm. Martinelli, Ramon U.; Zamerowski, Thomas J. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p125 

    We have studied InGaAs/InAsPSb double heterojunction, oxide stripe lasers grown by hydride vapor phase epitaxy. At 80 K the threshold current density is 0.4 kA/cm2, the staturated output power is about 4 mW, and the differential quantum efficiency just above threshold is 20% per facet. The...

  • Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy.... Baillargeon, J.N.; Cho, A.Y. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p207 

    Examines the growth of lattice-matched gallium indium arsenic phosphide (GaInAsP) layers on (100) InP by all solid source molecular beam epitaxy (MBE). Use of two valved cracking cells to supply the column V fluxes; Luminescence spectra of the lattice matched layers; Viability of all solid...

  • Acceptor diffusion across InGaAs/InP heterointerfaces. Ambrée, P.; Hangleiter, A.; Pilkuhn, M. H.; Wandel, K. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p931 

    Results on Zn and Cd diffusion across InGaAs/InP and InP/InGaAs heterointerfaces are reported. Drastic changes in the group III sublattice were obtained near the interface when Zn diffused from an InGaAs top layer across the heterojunction. Diffusion from an InP top layer, as well as Cd...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics