TITLE

Dopant migration and lateral p-n junctions in metalorganic vapor phase epitaxy of AlGaAs on

AUTHOR(S)
Wang, T.Y.; Heath, L.S.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p755
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the lateral junctions in aluminum gallium arsenide (AlGaAs) structures grown by metalorganic vapor phase epitaxy. Role of dopant migration in the distribution of dopant atoms; Details on the dopant concentration and geometry of the ridges; Enhancement of dopant diffusion in AlGaAs structures.
ACCESSION #
4227481

 

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