TITLE

Controlled misfit dislocation nucleation in Si[sub 0.90]Ge[sub 0.10] epitaxial layers grown on Si

AUTHOR(S)
Watson, G. Pattrick; Fitzgerald, Eugene A.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the misfit dislocation nucleation in Si[sub 0.90]Ge[sub 0.10] epitaxial layers grown on silicon substrates. Use of ion implantation nucleation to create misfit dislocations; Modification of electron beam induced current intensity; Enhancement of defect contrast of the epitaxial layer.
ACCESSION #
4227478

 

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