Controlled misfit dislocation nucleation in Si[sub 0.90]Ge[sub 0.10] epitaxial layers grown on Si

Watson, G. Pattrick; Fitzgerald, Eugene A.
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p746
Academic Journal
Examines the misfit dislocation nucleation in Si[sub 0.90]Ge[sub 0.10] epitaxial layers grown on silicon substrates. Use of ion implantation nucleation to create misfit dislocations; Modification of electron beam induced current intensity; Enhancement of defect contrast of the epitaxial layer.


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