Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

Ishikawa, Hiroshi
August 1993
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p712
Academic Journal
Examines the optical gain of strained quantum well grown on indium gallium arsenide (InGaAs) ternary substrate. Attribution of the subband energy separation to high optical gain; Details on the energy dispersion of valence band; Comparison between the optical gain of InGaAs and indium phosphide substrates.


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