TITLE

Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

AUTHOR(S)
Ishikawa, Hiroshi
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p712
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optical gain of strained quantum well grown on indium gallium arsenide (InGaAs) ternary substrate. Attribution of the subband energy separation to high optical gain; Details on the energy dispersion of valence band; Comparison between the optical gain of InGaAs and indium phosphide substrates.
ACCESSION #
4227466

 

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