Diffusion and doping of Si into GaAs from undoped SiO[sub x]/SiN film

Matsushita, S.; Terada, S.
July 1993
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p225
Academic Journal
Examines the diffusion and n-type doping of silicon (Si) into gallium arsenide from undoped SiO[sub x]/SiN double layered film. Use of rapid thermal annealing at 860-940 degree Celsius; Characteristics of the Si diffused layers; Details on the carrier profiles and electron concentration of the films.


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