TITLE

Prominent thermally stimulated current trap in low-temperature-grown molecular beam epitaxial GaAs

AUTHOR(S)
Fang, Z.-Q.; Look, D.C.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p219
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the thermally stimulated current trap in low-temperature grown molecular beam epitaxial gallium arsenide (GaAs). Range of temperature used in the study; Comparison between current traps T[sub 5] and T[sub 6]; Details on the defect reactions in arsenic-rich material.
ACCESSION #
4227452

 

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