TITLE

Band gap bowing GaP[sub 1-x]N[sub x] alloys

AUTHOR(S)
Liu, X.; Bishop, S.G.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p208
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the interband optical absorption of GaP[sub 1-x]N[sub x] alloys grown by molecular beam epitaxy. Use of photoluminescence excitation spectroscopy; Formation of indirect band gap alloys in gallium phosphide films; Relationship between band gap energy and nitrogen concentration.
ACCESSION #
4227448

 

Related Articles

  • Growth and properties of GaSbBi alloys. Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Yu, K. M.; Scanlon, D. O.; Buckeridge, J.; Jones, T. S.; Ashwin, M. J.; Veal, T. D. // Applied Physics Letters;9/30/2013, Vol. 103 Issue 14, p142106 

    Molecular-beam epitaxy has been used to grow GaSb1-xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The...

  • InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys. Colombelli, Raffaele; Jancu, Jean-Marc // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1534 

    Introduces energy-controlled molecular-beam-epitaxy-compatible deep centers in Al[sub x]Ga[sub 1-x]As alloys using indium sheets. Growth of the samples of aluminum molar fraction in the direct-gap range; Photoluminescence of the samples of aluminum molar fraction; Implementation of...

  • Perpendicular magnetic anisotropy in CoxPd1-x alloy films grown by molecular beam epitaxy. Childress, J. R.; Duvail, J. L.; Jasmin, S.; Barthélémy, A.; Fert, A.; Schuhl, A.; Durand, O.; Galtier, P. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6412 

    Presents a study that fabricated face-centered cubic Co[subx]Pd[sub1-x] alloy films by molecular beam epitaxy. Methodology; Results; Conclusion.

  • Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam... Obata, T.; Komeda, K.; Nakao, T.; Ueba, H.; Tatsuyama, C. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p199 

    Examines the structural properties of silicon-germanium alloys on silicon substrates by molecular beam epitaxy. Effect of buffer layers on the structural quality of the overgrown silicon-germanium alloy layer; Decrease in threading dislocation density in the alloy layer; Introduction of the...

  • Composition of AlGaAs. Wasilewski, Z. R.; Dion, M. M.; Lockwood, D. J.; Poole, P.; Streater, R. W.; SpringThorpe, A. J. // Journal of Applied Physics;2/15/1997, Vol. 81 Issue 4, p1683 

    Although the Al[sub χ]Ga[sub 1 - χ]As alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of χ. Here a new Al[sub χ]Ga[sub 1 - χ]As calibration structure, grown by molecular beam epitaxy, has been used to establish...

  • A C 1s core level x-ray photoelectron diffraction characterization of substitutional carbon in... Simon, L.; Aubel, D. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2635 

    Reports that epitaxial strained growth of Si1-yCy alloys with high C concentrations has been performed on Si(111) and Si(001) with the use of molecular beam epitaxy (MBE) Si evaporation and thermal interaction of the growth surface with a low C2H4 pressure at 500 degrees celsius. X-ray...

  • Transport properties of InAsxSb1-x (0≤x≤0.55) on InP grown by molecular-beam epitaxy. Tsukamoto, S.; Bhattacharya, P.; Chen, Y. C.; Kim, J. H. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p6819 

    Focuses on the molecular-beam epitaxy (MBE) growth of InAs[subx] Sb[sub1-x] alloys on InP substrates and their morphological, structural and electrical properties. Discussion on MBE growth; Electrical transport properties; Conclusion.

  • C lattice site distributions in metastable Ge[sub 1-y]C[sub y] alloys grown on Ge(001) by molecular-beam epitaxy. Park, S. Y.; D’Arcy-Gall, J.; Gall, D.; Kim, Y.-W.; Desjardins, P.; Greene, J. E. // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3644 

    Epitaxial metastable Ge[sub 1-y]C[sub y] alloy layers with y≤0.045 were grown on Ge(001) by solid-source molecular-beam epitaxy (MBE) at temperatures T[sub s]=200–400 °C. Using calculated strain coefficients and measured layer strains obtained from high-resolution reciprocal...

  • Effect of mixing enthalpy on relaxed and strained growth of ... compound alloys using... Genoe, J.; Nemeth, S. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p564 

    Deals with a study that discussed the molecular-beam epitaxy growth of ... compound alloys on oriented substrates. Relaxed and lattice-matched growth; Strained layer growth; Composition evolution from strained layer composition to relaxed layer composition.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics