Defect reduction by MeV ion implantation for shallow junction formation

Saito, S.; Kumagai, M.
July 1993
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p197
Academic Journal
Examines the effects of millielectron volt implantation on defects reduction for p-type shallow junction formation. Comparison between the preimplantation of fluorine and boron cations; Application of rapid thermal annealing at 1000-1100 degree Celsius; Suppression of boron-enhanced diffusion.


Related Articles

  • Electrical properties of shallow p+-n junctions formed by BF2 ion implantation in germanium preamorphized silicon. Ozturk, M. C.; Wortman, J. J. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p281 

    Shallow p+-n junctions were formed by BF2 ion implantation into both crystalline and Ge preamorphized substrates. Rapid thermal annealing (RTA) was used for dopant activation and damage removal. Secondary ion mass spectroscopy (SIMS) was used to measure the boron and fluorine distribution...

  • Fluorine implantation effect on boron diffusion in Si. Park, Yong-Jik; Kim, Jong-Jean // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p803 

    Presents information on a study which focused on fluorine implantation effect on boron diffusion in silicon. Experimental details; Results and discussion.

  • Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si. Mokhberi, Ali; Kasnavi, Reza; Griffin, Peter B.; Plummer, James D. // Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3530 

    The role of fluorine in suppressing boron diffusion was investigated by utilizing a buried dopant marker to monitor the interaction of fluorine with interstitials. A boron spike with a peak concentration of 1.2×10[sup 18] cm[sup -3] followed by 500 nm of undoped silicon was grown in a low...

  • Structural and electrical properties of BF+2 implanted, rapid annealed silicon. Lunnon, M. E.; Chen, J. T.; Baker, J. E. // Applied Physics Letters;1984, Vol. 45 Issue 10, p1056 

    A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorine except in regions containing residual...

  • Impact of Dose Rate Effects and Damage Engineering on Device Performance. Shim, Kyuha; Hwang, Yeonsang; Lee, Yongseung; An, Jungsoo; Ryu, Seonho; Hahn, Seungho; Cho, Changjune; Hur, Namhae; Guo, Baonian; Liu, Jinning; Erokhin, Yuri // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p137 

    Traditional implant conditions during source/drain formation process, such as dopant, dose, energy and incident angle have been known as key parameters determining device electrical characteristics. As devices scale down, instant dose rate of BF2 ion implantation, however, should be considered...

  • Formation of shallow donor in fluorine-implanted silicon. Holm, B.; Nielsen, K. Bonde // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1807 

    Focuses on a study which described the formation of shallow donor in fluorine-implanted silicon. Experimental procedures; Results; Discussion.

  • Doping of diamond by coimplantation of carbon and boron. Sandhu, G. S.; Swanson, M. L.; Chu, W. K. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1397 

    We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid-nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical...

  • Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Nishikawa, Satoshi; Tanaka, Akira // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2270 

    Examines the boron diffusion in preamorphized silicon as a function of dose carbon ion implantation. Occurrence of transient enhanced diffusion in the preamorphized depth region; Effect of C[sup +] implantation on the defect of amorphous/crystal interface; Discussion of the mechanism of...

  • Al and B ion-implantations in 6H- and 3C-SiC. Rao, Mulpuri V.; Griffiths, Peter; Holland, O. W.; Kelner, G.; Freitas, J. A.; Simons, David S.; Chi, P. H.; Ghezzo, M. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2479 

    Presents information on a study which evaluated the thermal stability of low and high energy aluminum and boron implants performed in n-type 6H- and 3C-SiC devices. Experimental details; Results and discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics