TITLE

Defect reduction by MeV ion implantation for shallow junction formation

AUTHOR(S)
Saito, S.; Kumagai, M.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p197
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of millielectron volt implantation on defects reduction for p-type shallow junction formation. Comparison between the preimplantation of fluorine and boron cations; Application of rapid thermal annealing at 1000-1100 degree Celsius; Suppression of boron-enhanced diffusion.
ACCESSION #
4227444

 

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