Nearly isotropic etching of 6H-SiC in NF[sub 3] and O[sub 2] using a remote plasma

Luther, B.P.; Ruzyllo, J.
July 1993
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p171
Academic Journal
Examines the isotropic etching of silicon carbide using a mixture of oxygen and halide-containing gases. Relationship between undercutting and etch depth; Importance of smooth surfaces for gas ratios; Use of evaporated aluminum as a mask.


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