Etch mechanism in the low refractive index silicon nitride plasma-enhanced chemical vapor

Yue Kuo
July 1993
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p144
Academic Journal
Examines the surface deposition and etching reactions for the plasma enhanced chemical vapor deposition silicon nitride process. Factors attributing the etch mechanism; Relationship between critical power and hydrogen etching mechanism; Implication of deposition rate as a function of plasma power and flow rate.


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