TITLE

Etch mechanism in the low refractive index silicon nitride plasma-enhanced chemical vapor

AUTHOR(S)
Yue Kuo
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the surface deposition and etching reactions for the plasma enhanced chemical vapor deposition silicon nitride process. Factors attributing the etch mechanism; Relationship between critical power and hydrogen etching mechanism; Implication of deposition rate as a function of plasma power and flow rate.
ACCESSION #
4227428

 

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