TITLE

Generation of carrier concentrations as high as 5x10[sup 19] cm[sup -3] in GaAs by Si doping

AUTHOR(S)
Sugioka, K.; Toyoda, K.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2817
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the generation of carrier concentrations in gallium arsenide through krypton fluoride excimer laser doping with silicon. Usage of the silicon hydride gas in the experiment; Connection of nonthermal equilibrium state with the cooling process and transient melting of the excimer laser doping; Investigation of thermal stability in the doped region.
ACCESSION #
4227416

 

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