Extremely low resistivity, high electron concentration ZnSe grown by planar-doping method

Ziqiang Zhu; Mori, Hiroshi
December 1992
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2811
Academic Journal
Investigates the low resistivity and high electron concentration of zinc selenide growth using the planar-doping method. Superiority of the planar-doped zinc selenide layers over the uniform doping; Measurement of chlorine concentration in the planar-doped sample; Usage of the secondary ion mass spectroscopy on the chlorine atoms.


Related Articles

  • Nitrogen doping during atomic layer epitaxial growth of ZnSe. Zhu, Z.; Horsburgh, G. // Applied Physics Letters;12/25/1995, Vol. 67 Issue 26, p3927 

    Examines the growth and characterization of nitrogen doping during atomic layer epitaxial growth of zinc selenide. Use of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy; Effect of the Fermi level at a growing...

  • Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique. Lin, W.; Guo, S. P.; Guo, S.P.; Tamargo, M. C.; Tamargo, M.C.; Kuskovsky, I.; Tian, C.; Neumark, G. F.; Neumark, G.F. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (N[sub A]-N[sub D]) increased to 1.5x10[sup 18] cm[sup -3] using single δ doping of N and Te...

  • Photoassisted doping of nitrogen into ZnSe using ethyl azide. Hayashi, Keiji // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2084 

    Examines the use of ethyl azide as a dopant for nitrogen doping into zinc selenide. Photoexcitation of ethyl azide during metalorganic vapor phase epitaxial growth; Indication of photoenhancement of an acceptor incorporation by photoluminescence; Photoenhancement of chemical reactivity of ethyl...

  • Post-growth p-type doping enhancement for ZnSe-based lasers using a Li[sub 3]N interlayer. Schulz, Oliver; Strassburg, Matthias; Rissom, Thorsten; Pohl, Udo W.; Bimberg, Dieter; Klude, Matthias; Hommel, Detlef // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4916 

    A method to increase decisively the p-type doping level in ZnSe-based laser diodes is described. Upon Li[sub 3]N indiffusion, the formation of a stable acceptor complex is observed. Free hole concentrations of 8 × 10[sup 18] cm[sup -3] are obtained. This value is at least one order of...

  • Acceptor doping in ZnSe versus ZnTe. Laks, David B.; Van de Walle, Chris G. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1375 

    Presents solubilities of acceptors in zinc selenide (ZnSe) and zinc telluride (ZnTe). Solubilities of lithium (Li) and sodium (Na) acceptors in ZnTe; Details on bonding properties of Li and Na acceptors; Dependence on dopant concentration of the dislocation density in p-type ZnSe epilayers...

  • High p-type doping of ZnSe using Li[sub 3]N diffusion. Lim, S.W.; Honda, T. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2437 

    Demonstrates the high p-type doping of ZnSe layer using a Li[sub 3]N diffusion technique. Level of the hole concentration of the p-type ZnSe layer; Resistivity of the layer; Administration of an ohmic contact by using the p[sup +]-type ZnSe as a contact layer for p-ZnSe epilayers.

  • Nitrogen radical doping during metalorganic vapor phase epitaxy of ZnSe. Morimoto, Keizo; Fujino, Takahiro // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2384 

    Investigates nitrogen radical doping during metalorganic vapor phase epitaxy of zinc selenide (ZnSe) layers. Effect of using active nitrogen generated by radio-frequency plasma discharge; Source materials used in the study; Cathodoluminescence spectra of the material; Characteristics of...

  • Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source. Kimura, K.; Miwa, S. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p81 

    Proposes a high-power plasma source for nitrogen doping in zinc selenide molecular beam epitaxy. Presence of a dominant atomic-like emissions around 800 nanometer; Value of the obtained activation ratio; Rise of the intensities of the emissions with increasing relative frequency power.

  • Observations on the limits to p-type doping in ZnSe. Fan, Y.; Han, J. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1001 

    Observes the limits to p-type doping in ZnSe using secondary ion mass spectroscopy measurements of nitrogen concentrations. Correlation to transport data from temperature-dependent Hall effect measurements; Role of nitrogen acceptor solubility in determining acceptor concentration in ZnTe and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics