InAs/Ga[sub 0.47]In[sub 0.53]As quantum wells: A new III-V materials system for light emission

Tournie, Eric; Ploog, Klaus H.
December 1992
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2808
Academic Journal
Proposes the use of strained indium arsenide/gallium indium arsenide quantum wells light emission in the mid-infrared wavelength range. Acquisition of light emission from all samples; Potential of the indium arsenide/gallium indium arsenide quantum wells materials system for fabrication; Operation of optoelectronic devices in the mid-infrared.


Related Articles

  • Energy Band Analysis of MQW Structure Based on Kronig-Penny Model. Yu Zhang; Yi Wang // Journal of Modern Physics (21531196);Jul2013, Vol. 4 Issue 7, p968 

    The effects of different potential well depths, well widths and barrier widths on energy band of multiple quantum well (MQW) structures are discussed in detail based on Kronig-Penny model. The results show that if the well and barrier width stay unchanged, the first and second band gaps increase...

  • Photoluminescence study of ZnCdO alloy. Mohanta, A.; Thareja, R. K. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p024901 

    The photoluminescence (PL) properties of ZnCdO alloy are investigated at various temperatures. Each PL profile contains four distinct peaks: P1, P2, P3, and P4. Peak P4 is due to free-excitonic recombination. The temperature mapping of the P3 peak position shows an S-shaped shift similar to the...

  • N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping. Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Grace Xing, Huili; Jena, Debdeep // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p171104 

    Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate...

  • Anomalous temperature characteristics of single wide quantum well InGaN laser diode. Świetlik, T.; Franssen, G.; Wiśniewski, P.; Krukowski, S.; Łepkowski, S. P.; Marona, L.; Leszczyński, M.; Prystawko, P.; Grzegory, I.; Suski, T.; Porowski, S.; Perlin, P.; Czernecki, R.; Bering-Staniszewska, A.; Eliseev, P. G. // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p071121 

    By using an atypically wide quantum well (95 Ã…) in the active layer of InGaN violet light emitting laser diode, we managed to fabricate a device characterized by very high thermal stability of the threshold current. The characteristic T0 temperature was measured to be 302 K, which is the...

  • Phosphor-free nanopyramid white light-emitting diodes grown on {[formula]} planes using nanospherical-lens photolithography. Wu, Kui; Wei, Tongbo; Lan, Ding; Wei, Xuecheng; Zheng, Haiyang; Chen, Yu; Lu, Hongxi; Huang, Kai; Wang, Junxi; Luo, Yi; Li, Jinmin // Applied Physics Letters;12/9/2013, Vol. 103 Issue 24, p241107 

    We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum...

  • Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices. Eladl, Sh. M.; Nasr, A.; Aboshosha, A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2009, Vol. 12 Issue 3, p260 

    This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic...

  • Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN [formula] substrates. Sawicka, M.; Chèze, C.; Turski, H.; Muziol, G.; Grzanka, S.; Hauswald, C.; Brandt, O.; Siekacz, M.; Kucharski, R.; Remmele, T.; Albrecht, M.; Krysko, M.; Grzanka, E.; Sochacki, T.; Skierbiszewski, C. // Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p111107 

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar [formula] and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar...

  • Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers. Zi-Hui Zhang; Wei Liu; Zhengang Ju; Swee Tiam Tan; Yun Ji; Zabu Kyaw; Xueliang Zhang; Liancheng Wang; Xiao Wei Sun; Demir, Hilmi Volkan // Applied Physics Letters;6/16/2014, Vol. 104 Issue 24, p1 

    InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show...

  • Impact of strain on deep ultraviolet nitride laser and light-emitting diodes. Sharma, T. K.; Towe, E. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 8, p086104 

    To date, the shortest wavelength of an ultraviolet current-injection nitride laser has been limited to ∼340 nm. This begs the question of whether there is a fundamental limitation that restricts the realization of injection lasers below this wavelength. This letter investigates this issue....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics