TITLE

Quantitative analysis of strain relaxation in Ge[sub x]Si[sub 1-x]/Si(110) heterostructures and

AUTHOR(S)
Hull, R.; Bean, J.C.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2802
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the quantitative analysis of strain relaxation in germanium [sub x] silicon [sub 1-x]/silicon (110) heterostructures. Presentation on how dislocations cause misfit-relieving defects; Measurement and modeling of the epilayer thickness; Determination of alloy stacking fault energy.
ACCESSION #
4227411

 

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