TITLE

Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly

AUTHOR(S)
Dodabalapur, A.; Chang, T.Y.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2796
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the molecular beam epitaxial growth of indium gallium aluminum arsenide/indium gallium arsenide heterojunction bipolar transistors. Proposal for the use of highly resistive epilayers; Isolation of indium phosphorus substrates on various devices; Demonstration of the growth of the heterojunction bipolar transistors.
ACCESSION #
4227409

 

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