TITLE

Large third-order optical nonlinearity of nanometer-sized amorphous semiconductor: Phosphorous

AUTHOR(S)
Hosono, Hideo; Abe, Yoshihiro
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2747
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the optical nonlinear susceptibility of amorphous phosphorus semiconductors, nanometer-sized particles. Formation of colloid particles in silicon oxide glass; Demonstration of the ion implantation technique; Application of the amorphous semiconductors in dielectrics.
ACCESSION #
4227392

 

Related Articles

  • An investigation of the electrical properties of metal-insulator-silicon capacitors with pyrolytic carbon electrodes. Graham, A. P.; Richter, K.; Jay, T.; Weber, W.; Knebel, S.; Schröder, U.; Mikolajick, T. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p104508 

    An investigation of amorphous, pyrolytic carbon for semiconductor applications is presented. We have deposited conductive carbon films on thin silicon oxide and aluminum oxide dielectrics and structured them into metal-insulator-silicon (MIS) capacitors in order to evaluate their electrical...

  • Third-order nonlinear optical susceptibilities of amorphous SnO[sub 2-x] thin films. Endo, Hiroshi; Sakai, Mitsuhiro; Watanabe, Yuichi; Takata, Masasuke // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p559 

    Examines the third-order nonlinear optical susceptibilities of amorphous SnO[sub 2-x] thin films. Effect of oxygen nonstoichiometry on the optical nonlinearity of the films; Preparation of the films on glass substrates; Use of radio-frequency magnetron sputtering technique.

  • Relaxation Properties of the Nonequilibrium Polyacenequinone Surface. Afanas�eva, R. V.; Ermakova, T. G.; Voronkov, M. G. // Doklady Physics;Oct2000, Vol. 45 Issue 10, p507 

    Discusses relaxation properties of the nonequilibrium polyacenequinone surface. Role of the dielectric spectra of amorphous polyacenequinone in studying kinetic phenomena in disordered semiconductors; Van Ruyven model of an isotype heterojunction with double depletion; Mechanism of the...

  • Amorphous lanthanide-doped TiO[sub x] dielectric films. van Dover, R.B. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p3041 

    Examines the effect of the addition of Nd, Tb or Dy on the dielectric properties of amorphous Ti-O thin films. Substitution of the dopant for Ti which decrease the leakage current, breakdown voltage and dielectric constant of the films; Suitability for incorporation into silicon integrated...

  • Investigation of Amorphous States of SiO[sub 2] by Raman Scattering Spectroscopy. Malinovsky, V. K.; Novikov, V. N.; Surovtsev, N. V.; Shebanin, A. P. // Physics of the Solid State;Jan2000, Vol. 42 Issue 1, p65 

    The vitreous SiO[sub 2] samples irradiated with fast neutrons at a dose of 5 × 10[sup 17] - 2.2 × 10[sup 20] per cm² are investigated by the Raman scattering technique. It is demonstrated that the maximum of the low-frequency Raman spectrum (boson peak) shifts with an increase in the...

  • Analysis of the vibrational mode spectra of amorphous SiO2 films. Martinet, C.; Devine, R. A. B. // Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4343 

    Focuses on a study which analyzed the spectral line shapes and the absorption frequencies of the oxygen related infrared active vibrational modes in amorphous silicon oxide films. Experimental procedures; Information on infrared absorption spectra; Results and discussion; Conclusion.

  • Nonlinear optical response of a dense two-level atom system embedded in a linear dielectric medium. Zhu, K.-D.; Li, W.-S. // Applied Physics B: Lasers & Optics;2000, Vol. 70 Issue 1, p65 

    Abstract. The nonlinear optical (local) response of a dense collection of two-level atoms embedded in a linear dielectric medium is investigated theoretically. The nonlinear response of absorption and dispersion of two-level atoms associated with a weak probe field in the presence of a strong...

  • Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors. Nishioka, Yasushiro; Shinriki, Hiroshi; Mukai, Kiichiro // Journal of Applied Physics;3/15/1987, Vol. 61 Issue 6, p2335 

    Presents a study which investigated the influence of silicon (Si) oxide formed on a silicon wafer during tantalum [sub 2] oxide[sub5] deposition on the dielectric characteristics of tantalum oxide capacitors. Materials and methods; Results and discussion; Conclusions.

  • New leakage mechanism in sub-5-nm oxynitride dielectrics. Tue Nguyen; Carl, Daniel A. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1972 

    Examines leakage mechanism in thin (3.5-6.5 nanometer/nm) oxynitride dielectrics prepared by rapid thermal annealing of silicon oxide films. Context of the theory for electronic conduction in 15 nm oxynitride films; Characteristics of oxynitride films; Details on the probability of tunneling...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics