Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of

Chen, Q.; Beyler, C.A.
May 1992
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2418
Academic Journal
Investigates the use of trimethylgallium and tertiarybutylarsine (TBA) in atomic layer and laser-assisted atomic layer epitaxy of gallium arsenide (GaAs). Potential of TBA for arsine replacement to achieve monolayer self-limiting growth; Factors influencing the reduction of carbon contamination in GaAs films; Values of threshold current densities.


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