Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by

Shen, H.; Dutta, M.
May 1992
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2400
Academic Journal
Presents the photoreflectance measurement of strain-induced piezoelectric field in a (111)boron (B) grown indium gallium arsenide/gallium arsenide heterostructure. Application of the Franz-Keldysh oscillations; Magnitude of the surface barrier height; Comparison of the electric field strength between (111)B and (100) sample.


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