TITLE

Pressure study of proximity effect induced scaling magnetoresistance in GaAs

AUTHOR(S)
Ghenim, L.; Mani, R.G.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2391
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the proximity effect induced scaling magnetoresistance in gallium arsenide. Comparison between the scaling magnetoresistance and hydrostatic pressure; Analysis of the magnetoresistance as a homogeneous function of the magnetic field; Variation of the normalized electron density obtained from the Hall effect technique.
ACCESSION #
4227374

 

Related Articles

  • Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs. Yamada, Syoji; Makimoto, Toshiki // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1022 

    Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The...

  • Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters. Yuldashev, Sh. U.; Shon, Y.; Kwon, Y. H.; Fu, D. J.; Kim, D. Y.; Kim, H. J.; Kang, T. W.; Fan, X. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and...

  • Charge control and geometric magnetoresistance of a gated AlGaAs/GaAs heterojunction transistor. Harrang, J. P.; Higgins, R. J.; Goodall, R. K.; Wallis, R. H.; Jay, P. R.; Delescluse, P. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4431 

    Presents a study which examined charge control and geometric magnetoresistance of a gated aluminum gallium arsenide(GaAs)/GaAs heterojunction transistor. Method of the study; Results and discussion; Conclusion.

  • Effect of substrate temperature on migration of Si in planar-doped GaAs. Santos, M.; Sajoto, T.; Zrenner, A.; Shayegan, M. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2504 

    Quantum oscillations in the magnetoresistance of GaAs δ (or planar) doped with Si are analyzed to obtain the electron densities of the electric subbands. We compare these densities with the results of self-consistently calculated subband structures of δ-doped GaAs in which the spread of...

  • Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters. Akinaga, H.; De Boeck, J.; Borghs, G.; Miyanishi, S.; Asamitsu, A.; Van Roy, W.; Tomioka, Y.; Kuo, L. H. // Applied Physics Letters;6/22/1998, Vol. 72 Issue 25 

    We show a negative magnetoresistance (MR) in GaAs with magnetic MnAs nanoclusters (about 1.5% at 30 K in 1 T). The clusters were formed in a two step process consisting of the molecular beam epitaxy of (Ga,Mn)As layer and the subsequent annealing. The origin of the negative MR is attributed to...

  • Negative magnetoresistance and impurity band conduction in an In...Ga../As/InP heterostructure. Dziuba, Z.; Dybko, K. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6619 

    Presents information on a study on electrical conduction in an n-type indium-gallium arsenide/indium phosphide sample grown by molecular beam epitaxy. Electric field analysis; Impurity band conduction; Nature of the impurity band; Negative magnetoresistance.

  • Magnetotransport properties of bismuth films on p-GaAs. Vereecken, P. M.; Sun, L.; Searson, P. C.; Tanase, M.; Reich, D. H.; Chien, C. L. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6529 

    Polycrystalline Bi films were deposited onto p-GaAs(100) by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred [012] orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film...

  • Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Hundhausen, M.; Ichiguchi, T.; Shiraki, Y. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p110 

    A parallel arrangement of thin wires has been fabricated in the AlxGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is...

  • Correlation between the signs of the magnetoresistance and of the interlayer coupling in.... Van Roy, W.; Akinaga, H. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p971 

    Examines the correlation between the signs of magnetoresistance and interlaying coupling in MnGa/(Mn,Ga,As)/MnGa trilayers. Details on the ferromagnetic and antiferromagnetic coupling of magnetic multilayers; Growth of trilayers on gallium arsenide substrate by molecular beam epitaxy;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics