Si-SiO[sub 2] interface states enhanced by oxidation-induced stacking faults

Yoshida, H.; Ohmori, M.
May 1992
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2389
Academic Journal
Examines the influence of oxidation-induced stacking faults (OSF) on the interface states of silicon (Si) metal-oxide-semiconductor (MOS) diode enhancement. Application of the isothermal capacitance transient spectroscopy; Fabrication of MOS diodes on CZ-Si wafer with ring OSF; Preparation of samples in varying regions.


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