TITLE

Si-SiO[sub 2] interface states enhanced by oxidation-induced stacking faults

AUTHOR(S)
Yoshida, H.; Ohmori, M.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2389
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of oxidation-induced stacking faults (OSF) on the interface states of silicon (Si) metal-oxide-semiconductor (MOS) diode enhancement. Application of the isothermal capacitance transient spectroscopy; Fabrication of MOS diodes on CZ-Si wafer with ring OSF; Preparation of samples in varying regions.
ACCESSION #
4227373

 

Related Articles

  • Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators.... Belkouch, S.; Jean, C. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p530 

    Examines the buildup of interface states with high field stressing in metal-oxide-semiconductor (MOS) insulators. Use of deep level transient spectroscopy to assess the buildup of interface states; Effect of nitrogen on oxidant diffusion; Relevance of dielectric integrity of gate oxides to MOS...

  • Method for reduction in surface generation current in polycrystalline-silicon-gate metal-oxide-semiconductor devices. Sheu, Yea-Dean; Hawkins, Gilbert A. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4694 

    Discusses a study which examined a method of reducing the interface state density of metal-oxide-semiconductor type solid-state imagers. Theoretical background; Computational approach considered; Results.

  • Single-frequency method for the determination of interface state density. Tolpadi, Amita; Srivastava, R. S. // Review of Scientific Instruments;Nov92, Vol. 63 Issue 11, p5419 

    The single-frequency method of Hill and Coleman [Solid-State Electron. 23, 987 (1980)] for the evaluation of interface state density has been modified to provide more accurate information about the interface state density. Interface state density obtained by this method has been found to be in...

  • Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field. Brown, D. B.; Saks, N. S. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3734 

    Studies the formation mechanisms of interface traps (N[subit]) in metal-oxide-semiconductor (MOS) devices. Time-dependence of the N[subit] formation; Description of N[subit]; Degraded characteristics of the electrical properties of the MOS device.

  • Mechanisms responsible for improvement of 4H–SiC/SiO[sub 2] interface properties by nitridation. Afanas’ev, V. V.; Stesmans, A.; Ciobanu, F.; Pensl, G.; Cheong, K. Y.; Dimitrijev, S. // Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p568 

    An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O[sub 2], N[sub 2]O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in...

  • Passivation of (111) Si/SiO[sub 2] interface by fluorine. Wang, X.W.; Ma, T.P. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2634 

    Examines the effect of fluorine on the radiation hardness of (111) silicon/silicon dioxide interface. Distribution of interface traps for a set of x-ray irradiated metal oxide semiconductors capacitors; Monotical improvement of radiation-induced interface traps; Passivation of the precursor for...

  • Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations. Tan, Shyue Seng; Chen, T. P.; Soon, Jia Mei; Loh, Kian Ping; Ang, C. H.; Chan, L. // Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1881 

    The nitrogen-enhanced negative bias temperature instability (NBTI) effect has been studied experimentally and theoretically. It is observed that both the interface state and positive fixed charge generation increase linearly with interfacial nitrogen concentration. The experimental results can...

  • Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions. Passlack, M.; Hong, M.; Schubert, E. F.; Zydzik, G. J.; Mannaerts, J. P.; Hobson, W. S.; Harris, T. D. // Journal of Applied Physics;6/1/1997, Vol. 81 Issue 11, p7647 

    This article investigates steady-state nonequilibrium conditions in metal-oxide-semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal-insulator-semiconductor) devices and due...

  • SiC/SiO... interface-state generation by electron injection. Afanas'ev, V. V.; Bassler, M. // Journal of Applied Physics;6/15/1999, Vol. 85 Issue 12, p8292 

    Studies the generation of interface states caused by electron injection in n- and p-type (3C, 4H, 6H)-SiC/Si0.../metal structures using photoinjection methods. Discussion on the metal-oxide-semiconductor (MOS); Experiment; Research findings; Discussion; Conclusions.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics